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NVTFS5820NL
Power MOSFET
60 V, 11.5 m W , Single N ? Channel, m 8FL
Features
? Small Footprint (3.3x3.3 mm) for Compact Design
? Low R DS(on) to Minimize Conduction Losses
? Low Q G and Capacitance to Minimize Driver Losses
? NVTFS5820NLWF ? Wettable Flanks Product
? AEC ? Q101 Qualified and PPAP Capable
? These Devices are Pb ? Free and are RoHS Compliant
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
60 V
http://onsemi.com
R DS(on) MAX
11.5 m W @ 10 V
15 m W @ 4.5 V
I D MAX
29 A
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Symbol
V DSS
V GS
Value
60
" 20
Unit
V
V
N ? Channel
D
Continuous Drain Cur-
rent R Y J ? mb (Notes 1,
2, 3, 4)
Power Dissipation
R Y J ? mb (Notes 1, 2, 3)
Steady
State
T mb = 25 ° C
T mb = 100 ° C
T mb = 25 ° C
T mb = 100 ° C
I D
P D
29
20
21
10
A
W
G
S
T A = 25 ° C
Continuous Drain Cur-
rent R q JA (Notes 1 &
3, 4)
Power Dissipation
R q JA (Notes 1, 3)
Pulsed Drain Current
T A = 25 ° C
Steady T A = 100 ° C
State
T A = 100 ° C
T A = 25 ° C, t p = 10 m s
I D
P D
I DM
11
8.0
3.2
1.6
247
A
W
A
1
WDFN8
( m 8FL)
CASE 511AB
MARKING DIAGRAM
1
S D
S XXXX D
S AYWW G D
G G D
Current limited by package T A = 25 ° C
(Note 4)
Operating Junction and Storage Temperature
I DmaxPkg
T J , T stg
70
? 55 to
175
A
° C
XXXX
A
Y
= Specific Device Code
= Assembly Location
= Year
Source Current (Body Diode)
Single Pulse Drain ? to ? Source Avalanche
Energy (T J = 25 ° C, V DD = 50 V, V GS = 10 V,
I L(pk) = 31 A, L = 0.1 mH, R G = 25 W )
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I S
E AS
T L
17
48
260
A
mJ
° C
WW = Work Week
G = Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Parameter
Junction ? to ? Mounting Board (top) ? Steady
State (Note 2, 3)
Junction ? to ? Ambient ? Steady State (Note 3)
Symbol
R Y J ? mb
R q JA
Value
7.3
47
Unit
° C/W
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi ( Y ) is used as required per JESD51 ? 12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface ? mounted on FR4 board using a 650 mm 2 , 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
? Semiconductor Components Industries, LLC, 2013
September, 2013 ? Rev. 4
1
Publication Order Number:
NVTFS5820NL/D
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